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* VCEO(sus) 400 V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100_C * Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
3-676 (c) Motorola, Inc. 1995
Designer'sTM Data Sheet
The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES:
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
SWITCHMODE Series NPN Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
MAXIMUM RATINGS
REV 2
THERMAL CHARACTERISTICS
Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25_C Derate above 25_C
Total Power Dissipation @ TA = 25_C Derate above 25_C
Emitter Current -- Continuous -- Peak (1)
Base Current -- Continuous -- Peak (1)
Collector Current -- Continuous -- Peak (1)
Emitter Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Characteristic
Rating
v 10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VEBO
VCEV
RJC
RJA
IC ICM
IE IEM
IB IBM
PD
PD
TL
Motorola Bipolar Power Transistor Device Data
- 65 to + 150 Value 1.25 62.5 Max 100 800 700 400 2 16 6 12 18 36 12 24 9 275
MJE13009*
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS
*Motorola Preferred Device
CASE 221A-06 TO-220AB
Order this document by MJE13009/D
Watts mW/_C
Watts mW/_C
_C/W _C/W
Unit Unit Adc Adc Adc Vdc Vdc Vdc
_C _C
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*Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS *ON CHARACTERISTICS SECOND BREAKDOWN *OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Motorola Bipolar Power Transistor Device Data
Crossover Time Voltage Storage Time Inductive Load, Clamped (Table 1, Figure 13) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz) Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 8 Adc, IB = 1.6 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 8 Adc, IB = 1.6 Adc) (IC = 12 Adc, IB = 3 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) DC Current Gain (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0) (IC = 8 A, Vclamp = 300 Vdc, IB1 = 1.6 A, VBE(off) = 5 Vdc, TC = 100_C) (VCC = 125 Vdc, IC = 8 A, IB1 = IB2 = 1.6 A, tp = 25 s, Duty Cycle 1%) Characteristic
v
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
IEBO
ICEV
Cob
hFE
IS/b --
tsv
fT
td
tc
ts
tr
tf
Min
400
--
--
--
--
--
--
--
-- -- --
-- -- -- --
--
-- --
4
8 6
0.12
0.92
0.45
0.06
Typ
180
0.2
1.3
--
-- -- --
-- -- -- --
-- --
--
-- --
--
See Figure 1 See Figure 2
Max
0.7
2.3
0.7
0.1
1.2 1.6 1.5
1 1.5 3 2
40 30
--
--
--
3
1
1
1 5
MJE13009
3-677
mAdc mAdc MHz Unit Vdc Vdc Vdc pF s s s s s s
MJE13009
100 50 IC, COLLECTOR CURRENT (AMP) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5 7 20 30 200 300 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 TC = 25C dc 100 s 1 ms 14 10 s IC, COLLECTOR (AMP) 12 10 8 6 4 2 0 0 100 200 300 400 3V 1.5 V 500 600 700 800 VBE(off) = 9 V 5V TC 100C IB1 = 2.5 A
THERMAL LIMIT BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO
VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
Figure 1. Forward Bias Safe Operating Area
Figure 2. Reverse Bias Switching Safe Operating Area
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown. 1 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
0.8
0.6 THERMAL DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (C)
Figure 3. Forward Bias Power Derating
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 1 may be found at any case temperature by using the appropriate curve on Figure 3. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section.
1 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1
0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 0.05 0.02
ZJC(t) = r(t) RJC RJC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 5 10 20 50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 100 200 500 1.0 k
t, TIME (ms)
Figure 4. Typical Thermal Response [ZJC(t)]
3-678
Motorola Bipolar Power Transistor Device Data
MJE13009
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 2 1.6 IC = 1 A 1.2 3A 5A 8A 12 A
hFE , DC CURRENT GAIN
30 20 25C
TJ = 150C
0.8
10 7 5 0.2
- 55C
0.4
TJ = 25C
VCE = 5 V 0.3 3 0.5 0.7 1 5 7 2 IC, COLLECTOR CURRENT (AMP) 10 20
0 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1 IB, BASE CURRENT (AMP)
2
3
5
Figure 5. DC Current Gain
Figure 6. Collector Saturation Region
1.4
0.7 0.6 IC/IB = 3
1.2 V, VOLTAGE (VOLTS)
IC/IB = 3 TJ = - 55C V, VOLTAGE (VOLTS) 0.5 0.4 0.3 0.2 0.1
TJ = 150C
1
0.8
25C 150C
- 55C 25C
0.6 0.4 0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
0 0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector-Emitter Saturation Voltage
10K VCE = 250 V IC, COLLECTOR CURRENT ( A)
4K 2K Cib TJ = 25C
1K TJ = 150C 100 125C 100C 10 75C 50C 1 25C 0.1 - 0.4 REVERSE FORWARD + 0.2 + 0.4 0 - 0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 0.6 C, CAPACITANCE (pF) 1K 800 600 400 200 100 80 60 40 0.1 Cob
100 0.2 0.5 1 2 5 10 20 50 VR, REVERSE VOLTAGE (VOLTS)
200
500
Figure 9. Collector Cutoff Region
Figure 10. Capacitance
Motorola Bipolar Power Transistor Device Data
3-679
MJE13009
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V 1N4933 0.001 F TEST CIRCUITS 5V PW DUTY CYCLE 10% tr, tf 10 ns 68 1k +5 V 1N4933 0.02 F 270 1k 2N2905 MJE200 47 100 1/2 W - VBE(off) VCC = 125 V RC = 15 D1 = 1N5820 or Equiv. RB = +10 V 25 s
NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1
RESISTIVE SWITCHING
33 MJE210
VCC +125 V L MR826* RC RB IB D.U.T. - 4.0 V IC 5.1 k 51 Vclamp *SELECTED FOR 1 kV VCE D1 TUT RB SCOPE
33 1N4933 2N2222
1k
CIRCUIT VALUES
Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16
GAP for 200 H/20 A Lcoil = 200 H
VCC = 20 V Vclamp = 300 Vdc
TEST WAVEFORMS
IC ICM t1 VCE VCEM TIME
OUTPUT WAVEFORMS tf CLAMPED tf UNCLAMPED t2 t1 ADJUSTED TO OBTAIN IC t L (I ) tf t1 coil CM VCC Vclamp t2 t2 Lcoil (ICM) Vclamp
Test Equipment Scope-Tektronics 475 or Equivalent
0 -8 V tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC
APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS
INTRODUCTION The primary considerations when selecting a power transistor for SWITCHMODE applications are voltage and current ratings, switching speed, and energy handling capability. In this section, these specifications will be discussed and related to the circuit examples illustrated in Table 2.(1) VOLTAGE REQUIREMENTS Both blocking voltage and sustaining voltage are important in SWITCHMODE applications. Circuits B and C in Table 2 illustrate applications that require high blocking voltage capability. In both circuits the switching transistor is subjected to voltages substantially higher than V CC after the device is completely off (see load line diagrams at IC = Ileakage 0 in Table 2). The blocking capability at this point depends on the base to emitter conditions and the device junction temperature. Since the highest device capability occurs when the base to emitter junction is reverse biased (V CEV), this is the recommended and specified use condition. Maximum I CEV at rated V CEV is specified at a relatively low reverse bias (1.5 Volts) both at 25C and 3-680 100_C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching applications occur during turn-on and turn-off. If the load contains a significant capacitive component, high current and voltage can exist simultaneously during turn-on and the pulsed forward bias SOA curves (Figure 1) are the proper design limits. For inductive loads, high voltage and current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as a Reverse Bias Safe Operating Area (Figure 2) which represents voltage-current conditions that can be sustained during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
(1) For detailed information on specific switching applications, see Motorola Application Notes AN-719, AN-767.
Motorola Bipolar Power Transistor Device Data
MJE13009
VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits B and C the voltage is clamped by the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the turn-off load line within the Reverse Bias SOA curve. Load lines that fall within the pulsed forward biased SOA curve during turn-on and within the reverse bias SOA curve during turn-off are considered safe, with the following assumptions: (1) The device thermal limitations are not exceeded. (2) The turn-on time does not exceed 10 s (see standard pulsed forward SOA curves in Figure 1). (3) The base drive conditions are within the specified limits shown on the Reverse Bias SOA curve (Figure 2). CURRENT REQUIREMENTS An efficient switching transistor must operate at the required current level with good fall time, high energy handling capability and low saturation voltage. On this data sheet, these parameters have been specified at 8 amperes which represents typical design conditions for these devices. The current drive requirements are usually dictated by the V CE(sat) specification because the maximum saturation voltage is specified at a forced gain condition which must be duplicated or exceeded in the application to control the saturation voltage. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor power dissipation occurs during the fall time (t fi ). For this reason considerable effort is usually devoted to reducing the fall time. The recommended way to accomplish this is to reverse bias the base-emitter junction during turn-off. The reverse biased switching characteristics for inductive loads are discussed in Figure 11 and Table 3 and resistive loads in Figures 13 and 14. Usually the inductive load component will be the dominant factor in SWITCHMODE applications and the inductive switching data will more closely represent the device performance in actual application. The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table 1) providing correlation between test procedures and actual use conditions.
RESISTIVE SWITCHING PERFORMANCE
1K 700 500 t, TIME (ns) 300 200 tr VCC = 125 V IC/IB = 5 TJ = 25C t, TIME (ns) 2K ts 1K 700 500 300 200 td @ VBE(off) = 5 V 0.2 0.3 2 3 5 7 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 10 20 100 0.2 0.3 tf 0.5 0.7 1 2 5 7 IC, COLLECTOR CURRENT (AMP) 10 20 VCC = 125 V IC/IB = 5 TJ = 25C
100 70 50
Figure 11. Turn-On Time
Figure 12. Turn-Off Time
IC 90% VCEM tsv trv tc 10% VCEM 90% IC tfi
Vclamp tti CURRENT 2 A/DIV
IC VCE VOLTAGE 50 V/DIV IC VCE TIME 20 ns/DIV
Vclamp IB 90% IB1
10% ICM
2% IC
TIME
Figure 13. Inductive Switching Measurements
Figure 14. Typical Inductive Switching Waveforms (at 300 V and 12 A with IB1 = 2.4 A and VBE(off) = 5 V) 3-681
Motorola Bipolar Power Transistor Device Data
MJE13009
Table 2. Applications Examples of Switching Circuits CIRCUIT
SERIES SWITCHING REGULATOR Collector Current
LOAD LINE DIAGRAMS
TURN-ON (FORWARD BIAS) SOA ton 10 ms DUTY CYCLE 10% PD = 4000 W 2 350 V 12 A TURN-ON TURN-OFF VCC 400 V 1 700 V COLLECTOR VOLTAGE
1
TIME DIAGRAMS
24 A TC = 100C
IC
A
VCC VO
TURN-OFF (REVERSE BIAS) SOA 1.5 V VBE(off) 9.0 V DUTY CYCLE 10%
t VCE VCC TIME
t TIME
RINGING CHOKE INVERTER Collector Current
VCC
VO N
B
TURN-ON (FORWARD BIAS) SOA TURN-ON ton 10 ms TURN-ON DUTY CYCLE 10% PD = 4000 W 2 TC = 100C 350 V 12 A TURN-OFF (REVERSE BIAS) SOA TURN-OFF 1.5 V VBE(off) 9.0 V TURN-OFF TURN-OFF DUTY CYCLE 10% TURN-ON 24 A VCC 400 V
1
IC toff ton VCE VCC+ N(Vo) VCC t t LEAKAGE SPIKE
700 V
1
VCC + N(Vo) COLLECTOR VOLTAGE PUSH-PULL INVERTER/CONVERTER
Collector Current
C
VCC
VO
TURN-ON (FORWARD BIAS) SOA TURN-ON ton 10 ms TURN-ON DUTY CYCLE 10% PD = 4000 W 2 TC = 100C 350 V TURN-OFF (REVERSE BIAS) SOA 12 A TURN-ON TURN-OFF 1.5 V VBE(off) 9.0 V TURN-OFF DUTY CYCLE 10% 24 A TURN-OFF VCC 400 V
1
IC ton VCE 2 VCC VCC toff t
2 VCC 700 V
1
t
COLLECTOR VOLTAGE
SOLENOID DRIVER 24 A Collector Current TC = 100C 12 A
TURN-ON (FORWARD BIAS) SOA TURN-ON ton 10 ms TURN-ON DUTY CYCLE 10% PD = 4000 W 2 350 V TURN-OFF (REVERSE BIAS) SOA TURN-OFF 1.5 V VBE(off) 9.0 V TURN-OFF DUTY CYCLE 10% TURN-OFF TURN-ON VCC 400 V 1 700 V COLLECTOR VOLTAGE
1
IC ton VCE VCC toff t
VCC SOLENOID
D
t
3-682
Motorola Bipolar Power Transistor Device Data
MJE13009
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 - 90% VCEM tfi = Current Fall Time, 90 - 10% ICM tti = Current Tail, 10 - 2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the turn-off waveforms is shown in Figure 13 to aid in the visual identity of these terms.
Motorola Bipolar Power Transistor Device Data
IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIII I I I I I I IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIII I I I I I I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II IIIIIIIIIIIIIIIIIIIII I I I I II
Table 3. Typical Inductive Switching Performance
TC _C tsv ns trv ns tfi ns tti ns IC AMP 3 5 8 tc ns 25 100 25 100 25 100 25 100 770 1000 630 820 720 920 640 800 100 230 150 160 26 55 27 50 17 24 200 200 10 30 2 8 2 4 240 320 100 180 72 100 55 70 20 32 77 120 41 54 12 NOTE: All Data recorded In the Inductive Switching Circuit In Table 1.
SWITCHING TIME NOTES
For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 14. In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.
]
3-683
MJE13009
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
CASE 221A-06 TO-220AB ISSUE Y
3-684
Motorola Bipolar Power Transistor Device Data
MJE13009
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Motorola Bipolar Power Transistor Device Data
*MJE13009/D*
3-685 MJE13009/D

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